Initial growth steps of ultrathin gate oxides

Takeo Hattori, Hiroshi Nohira, Kensuke Takahashi

    研究成果: Conference article査読

    14 被引用数 (Scopus)

    抄録

    The studies on the atomic-scale surface roughness, interface structures and interface-state-distribution in silicon bandgap at the initial growth steps of ultrathin oxides formed on Si(100) are reviewed in comparison with ultrathin oxides formed on Si(111). Interface-state-density distribution in silicon band gap was found to change periodically with progress of oxidation in accordance with layer-by-layer oxidation. Therefore, the oxide film thickness must be adjusted with the accuracy of less than 0.1 nm in order to minimize the interface-state-densities. The structural difference between 1-nm-thick structural transition layer and bulk silicon dioxide was detected from the measurement of O1s photoelectron spectra. The effect of elastic scattering on Si 2p photoelectrons in silicon oxide, which is important in the accurate structural analysis of ultrathin gate oxides, is also discussed.

    本文言語English
    ページ(範囲)17-24
    ページ数8
    ジャーナルMicroelectronic Engineering
    48
    1
    DOI
    出版ステータスPublished - 1999 9
    イベントProceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger
    継続期間: 1999 6 161999 6 19

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 原子分子物理学および光学
    • 凝縮系物理学
    • 表面、皮膜および薄膜
    • 電子工学および電気工学

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