Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li, S. Noda, H. Komiyama, T. Yamamoto, Y. Ikuhara

    研究成果: Article査読

    35 被引用数 (Scopus)

    抄録

    The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

    本文言語English
    ページ(範囲)1717-1723
    ページ数7
    ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    21
    5
    DOI
    出版ステータスPublished - 2003 9月

    ASJC Scopus subject areas

    • 凝縮系物理学
    • 表面および界面
    • 表面、皮膜および薄膜

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