Infrared study of SiH4-adsorbed Si(100) surfaces: Observation and mode assignment of new peaks

Y. Tsukidate, M. Suemitsu

研究成果: Article査読

9 被引用数 (Scopus)

抄録

SiHn adspecies on Si(100)-2 × surfaces adsorbed with SiH4 have been studied using multiple-internal-reflection infrared spectroscopy. In addition to the stretching modes of SiH, SiH2, and SiH3 known to be present on H-terminated Si surfaces, three new peaks were observed at 2036, 2060-2064, and 2077 cm-1. By observing the change of the peak intensities before and after the 300°C annealing as well as the effects of polarized radiation, the stretching modes at 2060-2064 cm-1 were concluded to be related to step-edge monohydrides, while the one at 2077 cm-1 was considered to be related to the monohydride at a dimer whose counterpart is -SiH3. Moreover, the SiH2 vibration is assigned to the bridging dihydrides between dimers, which is different from the one on HF-treated Si(100) known to be formed by breakage of the dimer bonds. These stretching modes are closely related to the presence of Si adatoms on the surface, providing new convenient probes for studying surface chemistry during epitaxy using SiH4 or Si2H6.

本文言語English
ページ(範囲)5206-5210
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
9 A
DOI
出版ステータスPublished - 2001 9月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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