Infrared study of chemistry of Si surfaces in etching solution

Michio Niwano, Taka Aki Miura, Ryo Tajima, Nobuo Miyamoto

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The chemistry of Si(100) and (111) surfaces during immersion in dilute hydrofluoric acid (HF) solution was investigated 'in-situ' and in real time using infrared absorption spectroscopy in the multiple internal reflection geometry. We demonstrate that in dilute HF solution, Si surfaces are not perfectly terminated by hydrogen, but is covered in part with hydrogen-associated Si fluorides, such as SiH 2 (SiF) and SiH 2 F 2 . We find the hydrogen coverage of the surface in dilute HF solution depends on the HF concentration of the solution. It is shown that rinsing in water following HF treatment leads to complete hydrogen termination of the surface. The present results suggest that hydrogen-associated Si fluorides are involved in the etching of Si crystal surfaces.

本文言語English
ページ(範囲)607-611
ページ数5
ジャーナルApplied Surface Science
100-101
DOI
出版ステータスPublished - 1996 7

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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