Infrared magneto-photoluminescence spectra and electron-hole g-factor of an InAs-inserted channel InGaAs/InAlAs heterostructure

K. Tsumura, S. Nomura, T. Akazaki, J. Nitta

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We performed infrared magneto-photoluminescence (PL) spectroscopy on an InAs-inserted-channel InGaAs/InAlAs heterostructure. Series of Landau levels were clearly observed in the infrared PL spectra. From the energy separation between σ+ and σ- components of PL, the electron-hole g-factor in each Landau level were determined. We discuss the obtained Landau fan-diagram from the points that nonparabolicity of conduction band structure and penetration of electron wavefunction into InGaAs layer.

本文言語English
ページ(範囲)315-317
ページ数3
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
34
1-2
DOI
出版ステータスPublished - 2006 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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