We performed infrared magneto-photoluminescence (PL) spectroscopy on an InAs-inserted-channel InGaAs/InAlAs heterostructure. Series of Landau levels were clearly observed in the infrared PL spectra. From the energy separation between σ+ and σ- components of PL, the electron-hole g-factor in each Landau level were determined. We discuss the obtained Landau fan-diagram from the points that nonparabolicity of conduction band structure and penetration of electron wavefunction into InGaAs layer.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2006 8|
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