Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC

Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige, Hajime Okumura

研究成果: Conference contribution

抄録

The influences of solution flow and lateral temperature distribution on the surface morphology of 4H-SiC single crystal grown from solution was investigated. A flat surface region was enlarged by the seed-rotation rate. The solution flow simulation indicated that the higher rotation rate made the outward solution flow ordered beneath the solution surface. Such a solution flow was thought to be effective to enlarge the flat region of the growth front. Furthermore, a full-flat surface was obtained with a hollow-type graphite rod at a seed-rotation rate of 60 min-1. The simulated results of temperature distribution showed that the hollow-type graphite rod reduced the lateral temperature gradient at the SiC-solution interface. The ordered solution flow and the small temperature gradient at the growth front were found to be effective to make the growth front flat in the solution-growth method.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2014
編集者Didier Chaussende, Gabriel Ferro
出版社Trans Tech Publications Ltd
ページ35-38
ページ数4
ISBN(印刷版)9783038354789
DOI
出版ステータスPublished - 2015
イベントEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
継続期間: 2014 9 212014 9 25

出版物シリーズ

名前Materials Science Forum
821-823
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
国/地域France
CityGrenoble
Period14/9/2114/9/25

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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