Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix

Noritaka Usami, Tetsu Ichitsubo, Toru Ujihara, Tatsuya Takahashi, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

研究成果: Article査読

19 被引用数 (Scopus)

抄録

The influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix was investigated. The strain was calculated as a function of the Ge fraction in SiGe. The band gap of strained SiGe was also calculated. The deviation of the aspect ratio from unity was found to be effective to decrease the band gap.

本文言語English
ページ(範囲)916-920
ページ数5
ジャーナルJournal of Applied Physics
94
2
DOI
出版ステータスPublished - 2003 7 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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