Influence of substrate bias voltage on the impurity concentrations in Hf films deposited by ion beam deposition method

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Minoru Isshiki

研究成果: Article査読

抄録

Hf films have been deposited on Si(100) substrate with or without a substrate bias voltage using a non-mass separated ion beam deposition (IBD) method. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) have been used to determine impurity concentrations of Hf films and a Hf target. By the SIMS results with Cs+ and O 2+ ion beams, the Hf film deposited at Vs = 0 V contains more impurities than the Hf film deposited at Vs = -50 V. In addition, from GDMS results for the Hf target and the Hf films deposited at Vs = 0 and -50 V, almost all the impurities have reduced by applying a negative substrate bias voltage. It means that applying a negative bias voltage to the substrate can decrease the impurity concentrations in Hf films.

本文言語English
ページ(範囲)279-282
ページ数4
ジャーナルMaterials Transactions
47
2
DOI
出版ステータスPublished - 2006 2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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