Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Masahito Uchikoshi, Mitsuhiro Wada, Makoto Ikeda, Minoru Isshiki

研究成果: Article査読

抄録

Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).

本文言語English
ページ(範囲)2181-2184
ページ数4
ジャーナルMaterials Letters
63
26
DOI
出版ステータスPublished - 2009 10 31

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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