The temperature dependence of the resistivity and the Hall effect in the range 0.3-300 K, and the Shubnikov-de Haas effect have been investigated in Sn-doped p-(Bi1-xSbx)2Te3 (0 ≤ x ≤ 1.0) single crystals. Doping of (Bi1-xSbx)2Te3 with tin showed that Sn exhibits acceptor properties in all crystals. The anomalous temperature and magnetic field behavior of the Hall coefficient was explained quantitatively by a model, which involves the complicated two-valence band structure of p-(Bi1-xSbx)2Te3. The quantization of the Hall resistivity ρH in the form of plateaus in the dependence of ρH on the magnetic field B is observed. The minima of the transverse magnetoresistivity ρ correspond to the start of plateaus, The oscillation of ρH is due to the presence of a carrier reservoir. An impurity resonant band with a high density of states in Sb2Te3 or the second lower valence band with a higher hole effective mass in (Bi1-xSbx)2Te3 serves as the reservoir. The valence band structure of (Bi1-xSbx)2Te3 is also discussed.
|ジャーナル||Physica Status Solidi (B) Basic Research|
|出版ステータス||Published - 2002|
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