Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

T. Suemasu; Y. Negishi; K. Takakura; F. Hasegawa; Toyohiro Chikyo

doi:10.1063/1.1405001

Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

T. Suemasu, Y. Negishi, K. Takakura, F. Hasegawa, Toyohiro Chikyo

研究成果: Article › 査読

76 被引用数 (Scopus)

抄録

We have fabricated Si/β-FeSi₂ particles/Si structures by reactive deposition epitaxy for β-FeSi₂ and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi₂ strongly depended on MBE-Si growth temperature for embedding β-FeSi₂ in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi₂ active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi₂ from which PL was observed was about 9% longer than that of β-FeSi₂ without PL or of bulk β-FeSi₂.

本文言語	English
ページ（範囲）	1804-1806
ページ数	3
ジャーナル	Applied Physics Letters
巻	79
号	12
DOI	https://doi.org/10.1063/1.1405001
出版ステータス	Published - 2001 9 17
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.1405001

フィンガープリント「Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

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abstract = "We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.",

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AU - Suemasu, T.

AU - Negishi, Y.

AU - Takakura, K.

AU - Hasegawa, F.

AU - Chikyo, Toyohiro

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