Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

T. Suemasu, Y. Negishi, K. Takakura, F. Hasegawa, Toyohiro Chikyo

研究成果: Article査読

76 被引用数 (Scopus)

抄録

We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.

本文言語English
ページ(範囲)1804-1806
ページ数3
ジャーナルApplied Physics Letters
79
12
DOI
出版ステータスPublished - 2001 9 17
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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