Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth

Toshinori Taishi, Yutaka Ohno, Ichiro Yonenaga, Keigo Hoshikawa

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Influence of interface shape between a seed and the grown crystal on dislocation generation behavior near the interface in Czochralski-grown Si crystal was investigated using heavily B-doped or heavily B and Ge codoped Si seeds. When the interface shape was convex toward the melt dislocations were generated near the interface, while dislocation generation was suppressed when the shape was planar. The seed with the convex interface sustains larger shear stress than that with the planar interface, and in the case dislocations are generated by thermal stress related to the interface shape at the edge of the interface.

本文言語English
ページ(範囲)560-563
ページ数4
ジャーナルPhysica B: Condensed Matter
401-402
DOI
出版ステータスPublished - 2007 12月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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