Influence of oxygen vacancies and strain on electronic reliability of SiO2-x films

Ken Suzuki, Yuta Ito, Hideo Miura, Tetsuo Shoji

研究成果: Conference article査読

抄録

We performed a quantum chemical molecular dynamics analysis for SiO 2-x structure under strain to make clear the effect of the strain and intrinsic defects on both electronic and structural characteristics of SiO2-x. The SiO2-x showed a large change of the structure during the simulation. This is mainly because that the Si-O bonds near an oxygen vacancy were broken and a free silicon monoxide molecule was generated in the SiO2-x structure. The magnitude of the band gap of the SiO2-x decreased drastically due to the formation of the free monoxide. In addition, the band gap decreased further under large tensile strain of about 10%. We can conclude therefore, that both the existence of oxygen vacancies and tensile strain in SiO2-x films deteriorate the electronic reliability of the oxide film seriously.

本文言語English
論文番号E9.19
ページ(範囲)77-82
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
864
出版ステータスPublished - 2005 12月 1
イベント2005 materials Research Society Spring Meeting - San Francisco, CA, United States
継続期間: 2005 3月 282005 4月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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