Influence of oxygen composition and carbon impurity on electronic reliability of HfO2

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

The effect of point defects such as oxygen vacancy and carbon interstitial on both electronic and structural characteristics of hamium dioxide was analyzed by a quantum chemical molecular dynamics method. When a carbon atom as the impurity is introduced in hafnium dioxide, carbon impurity states (donor and acceptor) are formed in the band gap of hafnium dioxide. The band gap calculated from the energy difference between the donor and acceptor decreases to 1.6 eV. We conclude therefore, it is very important to control the composition of HfO2 films in order to assure the electronic performance and reliability of hafnium dioxide film.

本文言語English
ホスト出版物のタイトル2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
出版社Springer-Verlag Wien
ページ165-168
ページ数4
ISBN(印刷版)9783211728604
DOI
出版ステータスPublished - 2007
イベント12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
継続期間: 2007 9月 252007 9月 27

出版物シリーズ

名前2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Other

Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
国/地域Austria
CityVienna
Period07/9/2507/9/27

ASJC Scopus subject areas

  • 電子工学および電気工学
  • モデリングとシミュレーション

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