Influence of oxide semiconductor thickness on TFT characteristics

Mitsuru Nakata, Hiroshi Tsuji, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

We discuss the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics by measuring transfer characteristics of amorphous InGaZnO (IGZO) TFTs with various IGZO thicknesses and using a simple calculation of depletion width in a semiconductor film. The ON current was nearly constant with respect to IGZO thickness because its value depended on high-density electrons in an accumulation region sufficiently thinner than IGZO thickness. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that the threshold voltage variation due to oxide semiconductor thickness variation increases with increasing donor density and oxide semiconductor thickness.

本文言語English
ホスト出版物のタイトルProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
ページ43-44
ページ数2
出版ステータスPublished - 2012
外部発表はい
イベント19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
継続期間: 2012 7月 42012 7月 6

出版物シリーズ

名前Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
国/地域Japan
CityKyoto
Period12/7/412/7/6

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 電子工学および電気工学

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