Influence of local thermal dissipation on electromigration in an Al thin-film line

Yuan Li, Hsin Tzu Lee, Masumi Saka

研究成果: Article査読

2 被引用数 (Scopus)

抄録

To improve the reliability of Al thin-film lines in integrated circuits, the influence of local thermal dissipation on electromigration (EM) was investigated. By performing current stressing experiments on Al thin-film lines with a special design, the unique distribution of hillocks/voids around four representative zones was found. The underlying mechanism was explained by investigating the corresponding atomic flux divergence according to finite element analyses. Such unique distribution of hillocks/voids, differing from the general EM phenomenon with hillocks at anode and voids at cathode, indicates the influence of local thermal dissipation induced by the voltage-measuring pads. Moreover, by changing the position of the voltage-measuring pads in the Al thin-film line, it was found that when the position of local thermal dissipation is farther from the center of the line, the EM resistance is higher. This finding provides a valuable insight for improving the EM resistance of Al thin-film lines and therefore enhancing the reliability of the corresponding devices.

本文言語English
ページ(範囲)178-183
ページ数6
ジャーナルMicroelectronics Reliability
65
DOI
出版ステータスPublished - 2016 10 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 安全性、リスク、信頼性、品質管理
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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