TY - JOUR
T1 - Influence of laser power on the orientation and microstructure of CeO 2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition
AU - Zhao, Pei
AU - Ito, Akihiko
AU - Tu, Rong
AU - Goto, Takashi
N1 - Funding Information:
This work was supported in part by the International Superconductivity Technology Center (ISTEC) and by the Global COE program of Materials Integration, Tohoku University .
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2010/8/15
Y1 - 2010/8/15
N2 - CeO 2 films were prepared on LaMnO 3 /MgO/Gd 2 Zr 2 O 7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P L ) from 46 to 101 W. Epitaxial (1 0 0) CeO 2 films were prepared at P L = 46-93 W (deposition temperature, T dep = 705-792 K). Epitaxial CeO 2 films had rectangular-shaped grains at P L = 46-77 W (T dep = 705-754 K), while square-shaped grains were obtained at P L = 85-93 W (T dep = 769-792 K). CeO 2 films showed a columnar microstructure. Epitaxial (1 0 0) CeO 2 films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and φ{symbol}-scan on (2 2 0) reflection of 3.4-3.2° and 6.0-7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO 2 films had a maximum of 4.6 μm h -1 at P L = 77 W (T dep = 754 K).
AB - CeO 2 films were prepared on LaMnO 3 /MgO/Gd 2 Zr 2 O 7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P L ) from 46 to 101 W. Epitaxial (1 0 0) CeO 2 films were prepared at P L = 46-93 W (deposition temperature, T dep = 705-792 K). Epitaxial CeO 2 films had rectangular-shaped grains at P L = 46-77 W (T dep = 705-754 K), while square-shaped grains were obtained at P L = 85-93 W (T dep = 769-792 K). CeO 2 films showed a columnar microstructure. Epitaxial (1 0 0) CeO 2 films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and φ{symbol}-scan on (2 2 0) reflection of 3.4-3.2° and 6.0-7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO 2 films had a maximum of 4.6 μm h -1 at P L = 77 W (T dep = 754 K).
KW - CeO
KW - High deposition rate
KW - Laser chemical vapor deposition
UR - http://www.scopus.com/inward/record.url?scp=77953129635&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953129635&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2010.04.023
DO - 10.1016/j.apsusc.2010.04.023
M3 - Article
AN - SCOPUS:77953129635
VL - 256
SP - 6395
EP - 6398
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 21
ER -