Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

Y. Tu, H. Takamizawa, B. Han, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, Y. Nagai

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended.

本文言語English
ページ(範囲)58-63
ページ数6
ジャーナルUltramicroscopy
173
DOI
出版ステータスPublished - 2017 2 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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