Influence of interface structure on oxidation rate of silicon

Kensuke Takahashi, Hiroshi Nohira, Tomohiro Nakamura, Tadahiro Ohmi, Takeo Hattori

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.

    本文言語English
    ページ(範囲)L68-L70
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    40
    1 A/B
    DOI
    出版ステータスPublished - 2001 1月 15

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(その他)
    • 物理学および天文学(全般)

    フィンガープリント

    「Influence of interface structure on oxidation rate of silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル