The influence of deposition temperature (Td) of initial amorphous layer on the lateral solid-phase epitaxy (L-SPE) of silicon was investigated in a wide deposition temperature range between -20°C and 405°C. Nomarski optical microscopy, scanning electron microscopy (SEM), cross-sectional transmission microscopy (TEM) and microprobe reflection high-energy electron diffraction (μ-RHEED) techniques were used. A hitherto unnoticed markedly strong correlation was found between Td and L-SPE growth where the lowest deposition temperature of Td = -20°C gave the highest growth rate and best film quality. Detailed SEM and TEM observation of amorphous Si (a-Si) films revealed that there were many vertical pores threading through a-Si films. A new L-SPE growth model explaining Td-dependent growth rate was proposed in terms of growth delay induced by the vertical pores. Low-temperature deposition of initial amorphous layers was shown to be an effective way of achieving high-quality films in a short time.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2002 2|
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