Influence of forming gas annealing on SiO 2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO 2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si 1+, Si 2+, and Si 3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

元の言語English
ホスト出版物のタイトルDielectrics for Nanosystems 5
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
ページ453-460
ページ数8
45
エディション3
DOI
出版物ステータスPublished - 2012 11 19
イベント5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
継続期間: 2012 5 62012 5 10

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
United States
Seattle, WA
期間12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント Influence of forming gas annealing on SiO <sub>2</sub>/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Suwa, T., Kumagai, Y., Teramoto, A., Muro, T., Kinoshita, T., Sugawa, S., Hattori, T., & Ohmi, T. (2012). Influence of forming gas annealing on SiO 2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. : Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 版, 巻 45, pp. 453-460) https://doi.org/10.1149/1.3700911