Influence of electrode materials on CeOx based resistive switching

S. Kano; C. Dou; M. Hadi; K. Kakushima; P. Ahmet; A. Nishiyama; N. Sugii; K. Tsutsui; Y. Kataoka; K. Natori; E. Miranda; T. Hattori; H. Iwai

doi:10.1149/1.3694352

Influence of electrode materials on CeO_x based resistive switching

S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Resistance-change in insulator having ionic bond hardly obtain a large on and off resistance ratio. The influence of the metal electrodes on the resistive switching behavior of CeO_x films has been investigated. Resistance switching properties using Ni, W and Ti as bottom electrode were caused by changing resistance of Ce oxide. However, resistance switching characteristics in samples with NiSi₂ electrode shows a large on and off window as large as 10⁵. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The fact that the set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field across the Ce oxide.

本文言語	English
ホスト出版物のタイトル	China Semiconductor Technology International Conference 2012, CSTIC 2012
出版社	Electrochemical Society Inc.
ページ	439-443
ページ数	5
版	1
ISBN（電子版）	9781607683186
ISBN（印刷版）	9781607683186
DOI	https://doi.org/10.1149/1.3694352
出版ステータス	Published - 2012
外部発表	はい
イベント	China Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China 継続期間: 2012 3月 18 → 2012 3月 19

出版物シリーズ

名前	ECS Transactions
番号	1
巻	44
ISSN（印刷版）	1938-5862
ISSN（電子版）	1938-6737

Other

Other	China Semiconductor Technology International Conference 2012, CSTIC 2012
国/地域	China
City	Shanghai
Period	12/3/18 → 12/3/19

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1149/1.3694352

他のファイルとリンク

引用スタイル

Kano, S., Dou, C., Hadi, M., Kakushima, K., Ahmet, P., Nishiyama, A., Sugii, N., Tsutsui, K., Kataoka, Y., Natori, K., Miranda, E., Hattori, T., & Iwai, H. (2012). Influence of electrode materials on CeO_x based resistive switching. In China Semiconductor Technology International Conference 2012, CSTIC 2012 (1 ed., pp. 439-443). (ECS Transactions; Vol. 44, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3694352

Kano, S, Dou, C, Hadi, M, Kakushima, K, Ahmet, P, Nishiyama, A, Sugii, N, Tsutsui, K, Kataoka, Y, Natori, K, Miranda, E, Hattori, T & Iwai, H 2012, Influence of electrode materials on CeO_x based resistive switching. in China Semiconductor Technology International Conference 2012, CSTIC 2012. 1 edn, ECS Transactions, no. 1, vol. 44, Electrochemical Society Inc., pp. 439-443, China Semiconductor Technology International Conference 2012, CSTIC 2012, Shanghai, China, 12/3/18. https://doi.org/10.1149/1.3694352

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abstract = "Resistance-change in insulator having ionic bond hardly obtain a large on and off resistance ratio. The influence of the metal electrodes on the resistive switching behavior of CeOx films has been investigated. Resistance switching properties using Ni, W and Ti as bottom electrode were caused by changing resistance of Ce oxide. However, resistance switching characteristics in samples with NiSi2 electrode shows a large on and off window as large as 105. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The fact that the set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field across the Ce oxide.",

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AU - Sugii, N.

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