Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (μsat) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (Vth) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 × 1011 /cm2 and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the μsat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.

本文言語English
ページ(範囲)345-351
ページ数7
ジャーナルECS Transactions
61
4
DOI
出版ステータスPublished - 2014
外部発表はい
イベントSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
継続期間: 2014 5月 112014 5月 15

ASJC Scopus subject areas

  • 工学(全般)

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