Individual cell measuring method for FeRAM retention testing

N. Tanabe, H. Koike, T. Miwa, J. Yamada, A. Seike, N. Kasai, H. Toyoshima, H. Hada

研究成果: Conference contribution

抄録

We propose a new testing methodology to predict the failure rate for long-term data retention of FeRAM chips. The individual retention time limit for each memory cell is determined by measuring the retention time dependence on the read signal voltage using a novel test system. From this experiment, we found that the retention time limit of each memory cell obeys a Gaussian distribution. We applied this method to the evaluation of 16 kbit FeRAM test chips, and successfully predicted the failure rates for long-term data retention time as the functions of temperature and writing voltage.

本文言語English
ホスト出版物のタイトル2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
出版社Institute of Electrical and Electronics Engineers Inc.
ページ23-27
ページ数5
ISBN(電子版)0780365879
DOI
出版ステータスPublished - 2001 1月 1
外部発表はい
イベント39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
継続期間: 2001 4月 302001 5月 3

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2001-January
ISSN(印刷版)1541-7026

Other

Other39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
国/地域United States
CityOrlando
Period01/4/3001/5/3

ASJC Scopus subject areas

  • 工学(全般)

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