Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)

Qi Kun Xue, Yukio Hasegawa, Tsuyoshi Ogino, Hisashi Kiyama, Toshio Sakurai

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.

本文言語English
ページ(範囲)153-156
ページ数4
ジャーナルScience Reports of the Rerearch Institutes Tohoku University Series A-Physics
44
2
出版ステータスPublished - 1997 3月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 金属および合金

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