Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers

M. Sugimoto, N. Hamao, K. Nishi, H. Yokoyama

研究成果: Conference contribution

抄録

Indium Composition Dependence of Jth GaAs QW In0.15Ga0.85As QW Jth=182A/Cm2= 115A/Cm2 (L=500um) at y=950nm Jth reduction mechanism Crystal quality = nonradiative carrier lifetime tnr improvement (x0.15) 10% reduction. Other possibilities Modification of band-structure Jth data are consistent with simulation = mhh change?.

本文言語English
ホスト出版物のタイトルLEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ635-636
ページ数2
ISBN(電子版)0879425504
DOI
出版ステータスPublished - 1990 1 1
外部発表はい
イベント3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990 - Boston, United States
継続期間: 1990 11 41990 11 9

出版物シリーズ

名前Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
1990-November
ISSN(印刷版)1092-8081

Conference

Conference3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990
CountryUnited States
CityBoston
Period90/11/490/11/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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