Indium composition dependent threshold current density in strained ingaas/algaas quantum well lasers

Mitsunori Sugimoto, Noboru Hamao, Hiroyuki Yokoyama, Kenichi Nishi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The dependence of threshold current density on indium composition in strained InGaAs/AlGaAs quantum well lasers is examined. A threshold current density (/th) as low as 115 A/cm2 is obtained in a chip with a 500 /un long cavity at a lasing wavelength of 950 nm. The Jth for a strained InGaAs QW was found to be 35% less than that for a GaAs QW laser with the same cavity length. Time resolved photoluminescence measurement revealed that the improvement in the nonradiative carrier lifetime for quantum wells with higher indium composition was limited to a Jth improvement of only 10%. Calculation suggests that the most likely reason for the major portion of the 7th improvement is gain enhancement due to a reduction in heavy hole mass.

本文言語English
ページ(範囲)L2098-L2100
ジャーナルJapanese journal of applied physics
30
12B
DOI
出版ステータスPublished - 1991 12月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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