InAs/AlGaSb heterostructure stress sensor for MEMS/NEMS applications

H. Yamaguchi, S. Miyashita, Y. Hirayama

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Semiconductor micro- and nano-electromechanical systems (MEMS/NEMS) have the potential to bring about a revolution in the application of semiconductor fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices. In addition, when device size reaches the nanometer scale and the characteristic frequency becomes sufficiently high to quantize the freedom of mechanical motion, novel quantum mechanical functions can be introduced. Compared with the commonly used materials systems, such as Si/SiO2 and GaAs/AlGaAs-based heterostructures, InAs-based structures have the advantage that the surface Fermi level pinning in the conduction band makes it possible to fabricate much smaller conductive structures than other semiconductors. We have successfully fabricated a novel piezoresistive stress sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. The size of this self-sensing device can be reduced to a nanometer scale and it is expected to be a key component in future MEMS/NEMS applications.

本文言語English
ホスト出版物のタイトルMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
出版社Institute of Electrical and Electronics Engineers Inc.
ページ175-176
ページ数2
ISBN(電子版)0780375815, 9780780375819
DOI
出版ステータスPublished - 2002 1月 1
外部発表はい
イベント12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
継続期間: 2002 9月 152002 9月 20

出版物シリーズ

名前MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
国/地域United States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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