InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applications

Hiroshi Yamaguchi, Sen Miyashita, Yoshiro Hirayama

研究成果: Conference article

8 引用 (Scopus)

抜粋

We have successfully fabricated a novel microelectromechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity increases with decreasing thickness. Tapping-mode AFM characterization clarified the frequency response of this device, showing the fundamental mode resonance frequency of about 300 kHz.

元の言語English
ページ(範囲)556-559
ページ数4
ジャーナルJournal of Crystal Growth
251
発行部数1-4
DOI
出版物ステータスPublished - 2003 4 1
外部発表Yes
イベントProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
継続期間: 2002 9 152002 9 20

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

フィンガープリント InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applications' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用