InAs quantum dot field effect transistors

G. Yusa, H. Sakaki

研究成果: Article査読

18 被引用数 (Scopus)

抄録

We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, single-electron discharge processes can be controlled by a surface gate voltage (Vg) as well as single-electron storage processes. We demonstrate possible application to novel photo devices and quantum dot memory devices.

本文言語English
ページ(範囲)247-250
ページ数4
ジャーナルSuperlattices and Microstructures
25
1-2
DOI
出版ステータスPublished - 1999 1
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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