We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 μm in the pulse mode operates up to 160K. The observed minimum threshold current density is 3.6kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2005 4月|
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