InAs quantum cascade lasers based on coupled quantum well structures

Keita Ohtani, Kazuue Fujita, Hideo Ohno

研究成果: Article査読

抄録

We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 μm in the pulse mode operates up to 160K. The observed minimum threshold current density is 3.6kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.

本文言語English
ページ(範囲)2572-2574
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
4 B
DOI
出版ステータスPublished - 2005 4月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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