We have investigated the device characteristics of InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted high electron mobility transistors (HEMTs) with a novel ohmic structure. The ohmic contact between the ohmic electrodes and the two-dimensional electron gas (2DEG) formed in the InAs layer is obtained by direct contact with the ohmic electrodes-InAs, instead of an alloyed normal-metal and semiconductor as in a conventional inverted HEMT. The contact resistance of 0.11 Ωmm between the ohmic electrodes and the channel is smaller by a factor of 4, than that obtained using a conventional AuGeNi alloyed ohmic contact. For a 0.5 μm-gate device, a maximum extrinsic transconductance of 1.2 S/mm was obtained at 4.2 K, even at a very low drain voltage of 0.2 V. These results show that this ohmic contact formation allows us to obtain the improved HEMT characteristics.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 1998 7 15|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics