InAs-based quantum cascade light emitting structures containing a double plasmon waveguide

K. Ohtani, H. Sakuma, H. Ohno

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Type-II InAs/GaSb/AlSb intersubband light emitters have a great potential over the type-I intersubband emitters because of its unique InAs/GaSb broken gap, the large optical gain and long optical phonon non-radiative relaxation time expected from the small effective mass of InAs quantum well (QW). Here we describe molecular epitaxy growth of InAs-based quantum cascade (QC) structures containing a double plasmon waveguide and its emission properties.

本文言語English
ホスト出版物のタイトルMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
出版社Institute of Electrical and Electronics Engineers Inc.
ページ39-40
ページ数2
ISBN(電子版)0780375815, 9780780375819
DOI
出版ステータスPublished - 2002 1 1
イベント12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
継続期間: 2002 9 152002 9 20

出版物シリーズ

名前MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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