InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B, and (3 1 1)B substrates

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B and (3 1 1)B substrates have been studied. Quantum dots (QDs) were observed when InAs was grown on GaAs(1 0 0) (or (3 1 1)B). QDs with bimodal size distribution were formed when InAs was deposited on GaAs(2 1 1)B at lower growth temperatures (Ts) whereas quantum dashes (QDHs) were observed at higher Ts. (In,Mn)As QDs grown on GaAs(1 0 0) showed a broad range of dot sizes with irregular shape. (In,Mn)As QDs with bimodal size distribution were observed for the structure grown on GaAs(3 1 1)B. (In,Mn)As QDs grown on GaAs(2 1 1)B showed improved size uniformity compared to those grown on GaAs (1 0 0) and (3 1 1)B. The effects of Mn as a surfactant on InAs nanostructures were also studied.

本文言語English
ページ(範囲)684-688
ページ数5
ジャーナルJournal of Crystal Growth
201
DOI
出版ステータスPublished - 1999 5
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 1998 8 311998 9 4

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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