In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films

Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, Satoshi Yamasaki

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Dangling bond creation processes during fluorocarbon plasma etching of silicon dioxide (Si O2) films were studied using an in vacuo electron spin resonance technique. In a range of about 10 nm underneath the interface of the Si O2 films with an amorphous fluorinated carbon film that was top-covered, a Si dangling bond in the films (E′ center, g value 2.0003) was located. Density of the E′ center was sustained during etching processes created by the illumination of vacuum ultraviolet emissions, higher photon energy than the bandgap of Si O2. The etching mechanism in this system is discussed taking into account the experimental results.

本文言語English
論文番号264104
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
26
DOI
出版ステータスPublished - 2005 6 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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