In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, Maki Suemitsu

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.

本文言語English
論文番号421
ジャーナルNanoscale Research Letters
10
1
DOI
出版ステータスPublished - 2015 12 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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