In-situ resistivity measurement of ZnS in diamond anvil cell Under high pressure

Yong Hao Han, Ji Feng Luo, Ai Min Hao, Chun Xiao Gao, Hong Sen Xie, Sheng Chun Qu, Hong Wu Liu, Guang Tian Zou

研究成果: Article査読

11 被引用数 (Scopus)

抄録

An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

本文言語English
ページ(範囲)927-930
ページ数4
ジャーナルChinese Physics Letters
22
4
DOI
出版ステータスPublished - 2005 4月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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