In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

H. D. Jung, N. Kumagai, T. Hanada, Z. Zhu, T. Yao, T. Yasuda, K. Kimura

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed.

本文言語English
ページ(範囲)4684-4686
ページ数3
ジャーナルJournal of Applied Physics
82
9
DOI
出版ステータスPublished - 1997 11月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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