In situ real-time infrared spectroscopy study of formation of porous anodic alumina on Si

Yasuo Kimura, Hirokazu Shiraki, Ken Ichi Ishibashi, Hisao Ishii, Kingo Itaya, Michio Niwano

研究成果: Article査読

14 被引用数 (Scopus)

抄録

We have investigated in situ and in real-time the formation process of anodic porous alumina on silicon using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS). We have collected IR absorption spectra of the interface between a porous alumina film and a Si substrate to elucidate the chemical processes involved in the porous-alumina formation. On the basis of the detailed analysis of IRAS spectra together with the variation of the anodic current density, we demonstrate that the chemical process at the alumina-Si interface proceeds as follows: As the pore reaches the alumina-Si interfacial region, inhomogeneous etching takes place. It produces small holes or cracks in the "barrier layer" at the bottom of the alumina pore, and through those holes or cracks the electrolyte pours into the vicinity of the Si substrate surface to form SiO2 nanodots. With further anodization, oxidation of the Si substrate surface occurs and finally peels the porous alumina film off the Si substrate. IRAS data are consistent with the results of observation by a field emission scanning electron microscope. The present results show that MIR-IRAS is a powerful tool for in situ monitoring chemical processes at semiconductor-solution interfaces.

本文言語English
ジャーナルJournal of the Electrochemical Society
153
5
DOI
出版ステータスPublished - 2006 4 17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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