In situ observation of interaction between grain boundaries during directional solidification of Si

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

本文言語English
ページ(範囲)37-41
ページ数5
ジャーナルScripta Materialia
148
DOI
出版ステータスPublished - 2018 4 15

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金

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