Ions (C+, N2+ and O+) implantation into evaporated Ti films was performed in the transmission electron microscope (TEM). Ti films grown on NaCl (001) surfaces at room temperature consisted mainly of (03·5)-oriented hcp-Ti and (110)-oriented CaF2-type TiHx. NaCl-type Ti compounds of (001)-oriented TiCz, TiNy and TiOu were epitaxially formed by the transformation of (03·5)-oriented hcp-Ti to (001)-oriented fcc-Ti sublattices and the occupation of the octahedral (O-) sites by implanted ions, whereas (110)-oriented Ti compounds were formed from a (110)-oriented TiHx without structural transformation of Ti sublattices. Observations of EELS elucidated that, in the early N-implanting stage, the variation of the energy of the loss peak due to plasmon excitation of the areas where TiHx grew in the as-evaporated Ti films was different from that of the areas where hcp-Ti grew. Analysis of Mulliken bond overlap populations indicated that the occupation of O-sites by N atoms gives rise to weakening of Ti-Ti bonds and forming of Ti-N covalent bonds.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||Published - 2003 5|
|イベント||13th International conference on Ion beam modification of Mate - Kobe, Japan|
継続期間: 2002 9 1 → 2002 9 6
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