In-situ observation of chemical states of a Si electrode surface during a galvanostatic oscillation in fluoride electrolytes using infrared absorption spectroscopy

Yasuo Kimura, Jun Nemoto, Masanori Shinohara, Michio Niwano

研究成果: Conference article査読

11 被引用数 (Scopus)

抄録

We have investigated a galvanostatic oscillation phenomenon during anodization of a silicon (Si) crystal electrode in fluoride electrolytes using infrared absorption spectroscopy in multiple internal reflection geometry (MIR-IRAS). We confirm that the electrode surface is covered with a thin oxide layer during the course of galvanostatic oscillation. We observe a weak oscillation of the oxide thickness that synchronizes with the oscillation of an anodic potential. We also find that when the anodic potential falls to its minimum, hydrogen-substituted oxide (suboxide, Si(O3)-H) forms on the electrode surface, and it diminishes before the anodic potential reaches its maximum. We propose a model of galvanostatic oscillation in which it is assumed that a decrease in the anodic potential is due to the formation of pits in the oxide over-layer and low-quality oxides containing Si(O3)-H species are preferentially formed at pit sites because of the concentration of the anodic current at those sites. We suggest that formation of an inhomogeneous oxide layer plays a crucial role for the galvanostatic oscillation phenomenon.

本文言語English
ページ(範囲)577-581
ページ数5
ジャーナルPhysica Status Solidi (A) Applied Research
197
2
DOI
出版ステータスPublished - 2003 5 1
イベントProceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology - Puerto de la Cruz, Spain
継続期間: 2002 3 102002 3 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料

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