In situ observation of anodic dissolution process of p-GaAs(001) in HCl solution by surface X-ray diffraction

Kohei Uosaki, Michio Koinuma, Toshihiro Kondo, Shen Ye, Ichizo Yagi, Hidenori Noguchi, Kazuhisa Tamura, Kunikazu Takeshita, Tadashi Matsushita

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The grazing incidence X-ray diffraction technique has been applied to monitor the anodic dissolution process of GaAs(001) in 0.1 M HCl solution. The surface diffraction intensity for the 〈11〉 direction of GaAs(001) was clearly observed and it decreased with time when the positive potential was applied to the electrode.

本文言語English
ページ(範囲)13-17
ページ数5
ジャーナルJournal of Electroanalytical Chemistry
429
1-2
DOI
出版ステータスPublished - 1997 5 30
外部発表はい

ASJC Scopus subject areas

  • 分析化学
  • 化学工学(全般)
  • 電気化学

フィンガープリント

「In situ observation of anodic dissolution process of p-GaAs(001) in HCl solution by surface X-ray diffraction」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル