TY - GEN
T1 - In situ monitoring of semiconductor processes using synchrotron radiation [growth and cleaning]
AU - Takakuwa, Yuji
PY - 1999/1/1
Y1 - 1999/1/1
N2 - In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.
AB - In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=85043783680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85043783680&partnerID=8YFLogxK
U2 - 10.1109/IMNC.1999.797531
DO - 10.1109/IMNC.1999.797531
M3 - Conference contribution
AN - SCOPUS:85043783680
T3 - 1999 International Microprocesses and Nanotechnology Conference
SP - 170
EP - 171
BT - 1999 International Microprocesses and Nanotechnology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 International Microprocesses and Nanotechnology Conference
Y2 - 6 July 1999 through 8 July 1999
ER -