In situ infrared study of chemical nature of Si surface in etching solution and water

M. Niwano, T. A. Miura, Yasuo Kimura, R. Tajima, N. Miyamoto

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

The chemical nature of Si(100) and (111) surfaces during immersion in dilute hydrofluoric acid (HF) solution and water was investigated 'in-situ' and in real time using infrared absorption spectroscopy in the multiple internal reflection geometry. We demonstrate that in dilute HF solution, Si surfaces are not perfectly terminated by hydrogen, but are covered in part with hydrogen-associated Si fluorides, such as SiH2(SiF). We find that the hydrogen coverage of the surface during storage in dilute HF solution depends on the HF concentration of the solution. It is shown that rinsing in water following HF treatment leads to complete hydrogen termination of the surface. We also show that hydrogen exchange reaction occurs on the hydrogen-terminated Si surface during storage in water.

本文言語English
ページ(範囲)277-282
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
432
出版ステータスPublished - 1997
外部発表はい
イベントProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 1996 4月 81996 4月 12

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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