In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs

R. Kircher, J. Murota, M. Furuno, K. Aizawa, M. Kato, A. Horinouchi, S. Ono

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

A low-temperature process has been investigated for the fabrication of delta-doped MOSFETs. The main process steps consist of a low-pressure chemical vapor deposition (LPCVD) at low temperatures and a wet oxidation at 700°C. By this process delta-doped n-channel MOSFETs have been fabricated and compared with conventional ones, containing a homogeneously doped channel layer. It is found that short channel effects can be suppressed by this delta-doped layer.

本文言語English
ページ672-674
ページ数3
DOI
出版ステータスPublished - 1991 1月 1
イベント23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8月 271991 8月 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • 工学(全般)

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