In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

M. Furusawa, J. Tashiro, A. Sasaki, K. Nakajima, M. Takakura, Toyohiro Chikyo, P. Ahmet, M. Yoshimoto

研究成果: Article査読

23 被引用数 (Scopus)

抄録

The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10-9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10-5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([110]CeO2∥[110]S1), was observed for the films thicker than about 1 nm.

本文言語English
ページ(範囲)1838-1840
ページ数3
ジャーナルApplied Physics Letters
78
13
DOI
出版ステータスPublished - 2001 3 26
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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