In-plane topological p-n junction in the three-dimensional topological insulator Bi2-x Sbx Te3-y Sey

Ngoc Han Tu, Yoichi Tanabe, Yosuke Satake, Khuong Kim Huynh, Katsumi Tanigaki

研究成果: Article査読

32 被引用数 (Scopus)

抄録

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi 2 'x Sb x Te 3 'y Se y thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi 2 'x Sb x Te 3 'y Se y on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

本文言語English
論文番号13763
ジャーナルNature communications
7
DOI
出版ステータスPublished - 2016 12月 9

ASJC Scopus subject areas

  • 化学 (全般)
  • 生化学、遺伝学、分子生物学(全般)
  • 物理学および天文学(全般)

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