In-plane lattice constant tuning of an oxide substrate with Ba 1-xSrxTiO3 and BaTiO3 buffer layers

K. Terai, M. Lippmaa, P. Ahmet, T. Chikyow, T. Fujii, H. Koinuma, M. Kawasaki

研究成果: Article査読

38 被引用数 (Scopus)

抄録

Oxide thin films are usually grown on substrates which offer the smallest mismatch with the desired structure of the film. The choice of high-quality substrates with suitable lattice constants is unfortunately very limited. Coherently grown films are therefore always under tensile or compressive in-plane strain. We report on the growth of a Ba1-xSr xTiO3/BaTiO3 bilayer buffer on a SrTiO 3 substrate. Changing the Sr/Ba ratio in the Ba1-xSr xTiO3 layer can be used to select a desired in-plane lattice constant in the 3.9 to 4.0 Å range. The thinner BaTiO3 film serves as a compliant layer while the thicker Ba1-xSr xTiO3 film determines the final surface lattice constant. This is achieved by a combination of low-temperature deposition and annealing at 1350°C. X-ray diffraction and high-resolution transmission electron microscopy were used to show that the final buffer layer surface is fully relaxed, cubic, and essentially defect free, while all lattice mismatch between the substrate and the buffer is relieved by misfit dislocations at the compliant BaTiO3/SrTiO3 interface.

本文言語English
ページ(範囲)4437-4439
ページ数3
ジャーナルApplied Physics Letters
80
23
DOI
出版ステータスPublished - 2002 6月 10
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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