Improving reliability of IGBT surface electrode for 200 °c operation

Tomohiro Nishimura, Yoshinari Ikeda, Hiroaki Hokazono, Eiji Mochizuki, Yoshikazu Takahashi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.

本文言語English
ホスト出版物のタイトル2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
出版社IEEE Computer Society
ページ2870-2873
ページ数4
ISBN(印刷版)9781479927050
DOI
出版ステータスPublished - 2014 1 1
外部発表はい
イベント7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan
継続期間: 2014 5 182014 5 21

出版物シリーズ

名前2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Other

Other7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
CountryJapan
CityHiroshima
Period14/5/1814/5/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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